IQGB300N60I4 Datasheet. Specs and Replacement

Type Designator: IQGB300N60I4  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 300 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 1150 pF

Package: MODULE

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IQGB300N60I4 datasheet

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IQGB300N60I4

IQGB300N60I4 PRELIMINARY DATASHEET 600V 300A, N-Channel IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, Half-Bridge Configuration in iQPak 2 Package FEATURES Very high switching speed Very low V CE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof... See More ⇒

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IQGB300N60I4

IQGB300N120I4 PRELIMINARY DATASHEET IGBT Module in iQpak 2 Package Half-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 300 C o T =80 C C Peak collector current I 600 ... See More ⇒

 6.2. Size:122K  iqxprz
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IQGB300N60I4

IQGB300N120GA4 PRELIMINARY DATASHEET IGBT Module in iQpak 2 Package PFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 300 C o T =80 C C Peak collector c... See More ⇒

Specs: IQGB150N120GA4, IQGB150N120GB4, IQGB150N120I4, IQGB228N120GA4, IQGB228N120GB4, IQGB228N120I4, IQGB300N120GA4, IQGB300N120I4, TGAN40N60FD, IQGB400N60I4, IQIB100N60A3, IQIB100N60D3, IQIB150N60B3, IQIB75N60A3, IQIB75N60D3, IQS1B100N60L4, IQS2B57N120K4

Keywords - IQGB300N60I4 transistor spec

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