IQGB300N60I4 IGBT. Datasheet pdf. Equivalent
Type Designator: IQGB300N60I4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 92 nS
Coesⓘ - Output Capacitance, typ: 1150 pF
Qgⓘ - Total Gate Charge, typ: 1880 nC
Package: MODULE
IQGB300N60I4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IQGB300N60I4 Datasheet (PDF)
iqgb300n60i4.pdf
IQGB300N60I4PRELIMINARY DATASHEET600V 300A, N-Channel IGBT in Trench & Field Stoptechnology with soft, fast recovery anti-paralleldiode, Half-Bridge Configuration in iQPak2PackageFEATURES Very high switching speed Very low VCE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof
iqgb300n120i4.pdf
IQGB300N120I4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector current I 600
iqgb300n120ga4.pdf
IQGB300N120GA4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackagePFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector c
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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