IQIB100N60A3 Datasheet and Replacement
Type Designator: IQIB100N60A3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 335 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 384 pF
Package: SOT227
- IGBT Cross-Reference
IQIB100N60A3 Datasheet (PDF)
iqib100n60a3.pdf

IQIB100N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package 1 2 3 Very high switching speed 1 Very low VCE(sat 4 Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - Parallel switching capability Pb-free lead finish; RoHS compliant 2
iqib100n60d3.pdf

IQIB100N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 Very high switching speed Very low V CE(sat) Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability 3 - parallel switching capability 2, 4
iqib150n60b3.pdf

IQIB150N60B3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed Very low VCE(sat1 3 Short circuit withstand time 5 us Designed for frequency converters andUPS Very tight parameter distribution2 4 High ruggedness, temperature stability- Parallel switching capability Pb-free lead finish
Datasheet: IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IHW20N120R2 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - IQIB100N60A3 transistor datasheet
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History: AOTF5B65M2 | MMG300D120B6UC



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