All IGBT. IXYN100N120C3 Datasheet

 

IXYN100N120C3 Datasheet and Replacement


   Type Designator: IXYN100N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 152 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Qgⓘ - Total Gate Charge, typ: 260 nC
   Package: SOT227
      - IGBT Cross-Reference

 

IXYN100N120C3 Datasheet (PDF)

 ..1. Size:241K  ixys
 ixyn100n120c3.pdf pdf_icon

IXYN100N120C3

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

 0.1. Size:226K  ixys
 ixyn100n120c3h1.pdf pdf_icon

IXYN100N120C3

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

 3.1. Size:184K  ixys
 ixyn100n120b3h1.pdf pdf_icon

IXYN100N120C3

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES

 6.1. Size:215K  ixys
 ixyn100n65a3.pdf pdf_icon

IXYN100N120C3

Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CM300DX-24S | MMG75H120X6TC | STGW40H120F2 | MIAA10WD600TMH | BSM200GB120DLC | MMG450WE065B6EN | FD400R33KF2C

Keywords - IXYN100N120C3 transistor datasheet

 IXYN100N120C3 cross reference
 IXYN100N120C3 equivalent finder
 IXYN100N120C3 lookup
 IXYN100N120C3 substitution
 IXYN100N120C3 replacement

 

 
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