All IGBT. IXYN100N120C3H1 Datasheet

 

IXYN100N120C3H1 Datasheet and Replacement


   Type Designator: IXYN100N120C3H1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 690 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 134 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Package: SOT227
 

 IXYN100N120C3H1 substitution

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IXYN100N120C3H1 Datasheet (PDF)

 0.1. Size:226K  ixys
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IXYN100N120C3H1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

 1.1. Size:241K  ixys
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IXYN100N120C3H1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

 3.1. Size:184K  ixys
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IXYN100N120C3H1

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: AFGHL40T65SPD | IKZ75N65EL5 | NCE15TD60BD | GT60M324 | IXGR40N60BD1 | STGP19NC60H | MMG100Q120B6TN

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