IXYN100N120C3H1 Specs and Replacement
Type Designator: IXYN100N120C3H1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 690 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 134 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 353 pF
Package: SOT227
IXYN100N120C3H1 Substitution - IGBT ⓘ Cross-Reference Search
IXYN100N120C3H1 datasheet
ixyn100n120c3h1.pdf
1200V XPTTM IGBT VCES = 1200V IXYN100N120C3H1 GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES C... See More ⇒
ixyn100n120b3h1.pdf
Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYN100N120B3H1 GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES... See More ⇒
Specs: IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , FGH40N60UFD , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , IXYN120N65B3D1 , IXYN120N65C3D1 , IXYN150N60B3 , IXYN75N65C3D1 .
Keywords - IXYN100N120C3H1 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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