IXYN100N65C3H1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYN100N65C3H1 Specs and Replacement

Type Designator: IXYN100N65C3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 475 pF

Package: SOT227

IXYN100N65C3H1 Substitution

- IGBT ⓘ Cross-Reference Search

IXYN100N65C3H1 datasheet

..1. Size:233K ixys
ixyn100n65c3h1.pdf pdf_icon

Preliminary Technical Information VCES = 650V XPTTM 650V GenX3TM IXYN100N65C3H1 IC110 = 90A w/ Sonic Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, R... See More ⇒

4.1. Size:215K ixys
ixyn100n65a3.pdf pdf_icon

Preliminary Technical Information VCES = 650V 650V XPTTM IGBT IXYN100N65A3 IC110 = 100A GenX3TM VCE(sat) 1.80V tfi(typ) = 122ns Ultra Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G ... See More ⇒

4.2. Size:231K ixys
ixyn100n65b3d1.pdf pdf_icon

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6.1. Size:226K ixys
ixyn100n120c3h1.pdf pdf_icon

1200V XPTTM IGBT VCES = 1200V IXYN100N120C3H1 GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES C... See More ⇒