All IGBT. IXYN100N65C3H1 Datasheet

 

IXYN100N65C3H1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYN100N65C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 475 pF
   Qgⓘ - Total Gate Charge, typ: 172 nC
   Package: SOT227

 IXYN100N65C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYN100N65C3H1 Datasheet (PDF)

 ..1. Size:233K  ixys
 ixyn100n65c3h1.pdf

IXYN100N65C3H1 IXYN100N65C3H1

Preliminary Technical InformationVCES = 650VXPTTM 650V GenX3TM IXYN100N65C3H1IC110 = 90Aw/ Sonic DiodeVCE(sat) 2.3Vtfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, R

 4.1. Size:215K  ixys
 ixyn100n65a3.pdf

IXYN100N65C3H1 IXYN100N65C3H1

Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG

 4.2. Size:231K  ixys
 ixyn100n65b3d1.pdf

IXYN100N65C3H1 IXYN100N65C3H1

Advance Technical InformationVCES = 650VXPTTM 650V IXYN100N65B3D1IC110 = 100AGenX3TM w/ DiodeVCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M

 6.1. Size:226K  ixys
 ixyn100n120c3h1.pdf

IXYN100N65C3H1 IXYN100N65C3H1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

 6.2. Size:241K  ixys
 ixyn100n120c3.pdf

IXYN100N65C3H1 IXYN100N65C3H1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

 6.3. Size:184K  ixys
 ixyn100n120b3h1.pdf

IXYN100N65C3H1 IXYN100N65C3H1

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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