IXYN120N65B3D1 PDF and Equivalents Search

 

IXYN120N65B3D1 Specs and Replacement

Type Designator: IXYN120N65B3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 250 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 586 pF

Package: SOT227

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IXYN120N65B3D1 datasheet

 ..1. Size:226K  ixys
ixyn120n65b3d1.pdf pdf_icon

IXYN120N65B3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65B3D1 IC110 = 120A GenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107ns Extreme Light Punch through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ ... See More ⇒

 4.1. Size:227K  ixys
ixyn120n65c3d1.pdf pdf_icon

IXYN120N65B3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN120N65C3D1 IC110 = 100A GenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46ns Extreme Light Punch through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = ... See More ⇒

 6.1. Size:212K  ixys
ixyn120n120c3.pdf pdf_icon

IXYN120N65B3D1

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYN120N120C3 GenX3TM IC110 = 120A VCE(sat) 3.20V tfi(typ) = 96ns High-Speed IGBTs for 20-50 kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE ... See More ⇒

 9.1. Size:215K  ixys
ixyn100n65a3.pdf pdf_icon

IXYN120N65B3D1

Preliminary Technical Information VCES = 650V 650V XPTTM IGBT IXYN100N65A3 IC110 = 100A GenX3TM VCE(sat) 1.80V tfi(typ) = 122ns Ultra Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G ... See More ⇒

Specs: IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , GT50JR22 , IXYN120N65C3D1 , IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C .

Keywords - IXYN120N65B3D1 transistor spec

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