All IGBT. IXBF15N300C Datasheet

 

IXBF15N300C Datasheet and Replacement


   Type Designator: IXBF15N300C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 37 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Package: I4PAK
      - IGBT Cross-Reference

 

IXBF15N300C Datasheet (PDF)

 ..1. Size:227K  ixys
ixbf15n300c.pdf pdf_icon

IXBF15N300C

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Tran

 9.1. Size:228K  ixys
ixbf10n300c.pdf pdf_icon

IXBF15N300C

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF10N300CHigh Frequency,IC110 = 10ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMmbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transi

 9.2. Size:196K  ixys
ixbf14n300.pdf pdf_icon

IXBF15N300C

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF14N300BIMOSFETTM MonolithicIC90 = 14ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

 9.3. Size:195K  ixys
ixbf12n300.pdf pdf_icon

IXBF15N300C

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

Datasheet: IXYN120N65B3D1 , IXYN120N65C3D1 , IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , CRG40T60AN3H , IXBF20N360 , IXBF22N300 , IXBF28N300 , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV .

History: APT30GT60BRD | IQGB300N60I4 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXBF50N360 | APTGT75X120BTP3

Keywords - IXBF15N300C transistor datasheet

 IXBF15N300C cross reference
 IXBF15N300C equivalent finder
 IXBF15N300C lookup
 IXBF15N300C substitution
 IXBF15N300C replacement

 

 
Back to Top

 


 
.