IXBF28N300 Specs and Replacement
Type Designator: IXBF28N300
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 216 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 412 nS
Coesⓘ - Output Capacitance, typ: 87 pF
Package: I4PAK
IXBF28N300 Substitution - IGBTⓘ Cross-Reference Search
IXBF28N300 datasheet
ixbf28n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF28N300 BIMOSFETTM Monolithic IC90 = 28A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒
ixbf20n300.pdf
High Voltage, High Gain VCES = 3000V IXBF20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 Isolated Tab 5 VGES Continuous 20 V VGEM Transient 30 V 1 = Ga... See More ⇒
ixbf22n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒
ixbf20n360.pdf
Preliminary Technical Information High Voltage, VCES = 3600V IXBF20N360 High Frequency, IC110 = 18A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolat... See More ⇒
Specs: IXYN75N65C3D1, IXYN80N90C3H1, IXYN82N120C3, IXBF10N300C, IXBF14N300, IXBF15N300C, IXBF20N360, IXBF22N300, CRG60T60AN3H, IXBF50N360, IXBH10N300, IXBH10N300HV, IXBH14N300HV, IXBA10N300HV, IXBA12N300HV, IXBA14N300HV, IXBA16N170AHV
Keywords - IXBF28N300 transistor spec
IXBF28N300 cross reference
IXBF28N300 equivalent finder
IXBF28N300 lookup
IXBF28N300 substitution
IXBF28N300 replacement
History: IGC28T65QE | CT20VS-8
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
bc546 | 2sc458 | a733 transistor | mpsa92 | tip142 | d882 | irf740 datasheet | ksa992