All IGBT. IXBF28N300 Datasheet

 

IXBF28N300 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBF28N300
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 216 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 412 nS
   Coesⓘ - Output Capacitance, typ: 87 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: I4PAK

 IXBF28N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBF28N300 Datasheet (PDF)

 ..1. Size:196K  ixys
 ixbf28n300.pdf

IXBF28N300 IXBF28N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF28N300BIMOSFETTM MonolithicIC90 = 28ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

 9.1. Size:197K  ixys
 ixbf20n300.pdf

IXBF28N300 IXBF28N300

High Voltage, High GainVCES = 3000VIXBF20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2Isolated Tab5VGES Continuous 20 VVGEM Transient 30 V1 = Ga

 9.2. Size:196K  ixys
 ixbf22n300.pdf

IXBF28N300 IXBF28N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

 9.3. Size:229K  ixys
 ixbf20n360.pdf

IXBF28N300 IXBF28N300

Preliminary Technical InformationHigh Voltage,VCES = 3600VIXBF20N360High Frequency,IC110 = 18ABiMOSFETTM MonolithicVCE(sat) 3.4VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 V12VGES Continuous 20 VIsolat

Datasheet: IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 , IXBF22N300 , BT40T60ANF , IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV .

 

 
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