All IGBT. IXBH10N300HV Datasheet

 

IXBH10N300HV Datasheet and Replacement


   Type Designator: IXBH10N300HV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 180 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 34 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 340 nS
   Coesⓘ - Output Capacitance, typ: 42 pF
   Qg ⓘ - Total Gate Charge, typ: 46 nC
   Package: TO247
 

 IXBH10N300HV substitution

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IXBH10N300HV Datasheet (PDF)

 ..1. Size:271K  ixys
 ixbh10n300hv.pdf pdf_icon

IXBH10N300HV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBA10N300HVBIMOSFETTM MonolithicIXBH10N300HVIC110 = 10ABipolar MOS TransistorVCE(sat) 2.8VTO-263HV (IXBA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VTO-247HV (IXBH)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V

 4.1. Size:157K  ixys
 ixbh10n300.pdf pdf_icon

IXBH10N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBH10N300BIMOSFETTM MonolithicIC110 = 10ABipolar MOS TransistorVCE(sat) 3.2VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 VG = Gate C = CollectorVGEM Transient 30

 7.1. Size:486K  ixys
 ixbh10n170.pdf pdf_icon

IXBH10N300HV

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

 7.2. Size:596K  ixys
 ixbh10n170 ixbt10n170.pdf pdf_icon

IXBH10N300HV

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

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History: IXGT2N250

Keywords - IXBH10N300HV transistor datasheet

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