All IGBT. IXBH20N140 Datasheet

 

IXBH20N140 Datasheet and Replacement


   Type Designator: IXBH20N140
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 60 nC
   Package: TO247AD
      - IGBT Cross-Reference

 

IXBH20N140 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixbh20n140.pdf pdf_icon

IXBH20N140

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 0.1. Size:62K  ixys
 ixbh20n140-160.pdf pdf_icon

IXBH20N140

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 6.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH20N140

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 7.1. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH20N140

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

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Datasheet: IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , FGA60N65SMD , IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 .

History: IXXR110N65B4H1 | NGTB15N60S1EG

Keywords - IXBH20N140 transistor datasheet

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