IXBH20N140 Specs and Replacement
Type Designator: IXBH20N140
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.7 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO247AD
IXBH20N140 Substitution - IGBT ⓘ Cross-Reference Search
IXBH20N140 datasheet
ixbh20n140.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140... See More ⇒
ixbh20n140-160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140... See More ⇒
ixbh20n160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140... See More ⇒
ixbh20n360hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.4V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3600 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒
Specs: IXBF50N360 , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , SGT60N60FD1P7 , IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 .
Keywords - IXBH20N140 transistor spec
IXBH20N140 cross reference
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