IXBH42N300HV IGBT. Datasheet pdf. Equivalent

   Type Designator: IXBH42N300HV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 104 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 330 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247HV

IXBH42N300HV Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBH42N300HV Datasheet (PDF)

..1. Size:268K ixys
ixbh42n300hv.pdf

Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans

7.1. Size:206K ixys
ixbh42n250.pdf

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

7.2. Size:116K ixys
ixbh42n170a.pdf

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

7.3. Size:175K ixys
ixbh42n170 ixbt42n170.pdf

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

7.4. Size:117K ixys
ixbh42n170a ixbt42n170a.pdf