HGTH12N40C1 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTH12N40C1
Type: IGBT
Marking Code: G12N40C1
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 75
Maximum Collector-Emitter Voltage |Vce|, V: 400
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 12
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 50
Total Gate Charge (Qg), typ, nC: 19
Package: TO218
HGTH12N40C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTH12N40C1 Datasheet (PDF)
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HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf
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HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG
hgth12n4.pdf
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HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG
hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf
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HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo
Datasheet: HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , TGAN40N60FD , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 .
![HGTH12N40C1](https://alltransistors.com/images/us.png)
![HGTH12N40C1](https://alltransistors.com/images/es.png)
![HGTH12N40C1](https://alltransistors.com/images/ru.png)
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