IXBT42N300HV Specs and Replacement
Type Designator: IXBT42N300HV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 104 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
tr ⓘ - Rise Time, typ: 330 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO268HV IXBT42N300HV Substitution - IGBT ⓘ Cross-Reference Search
IXBT42N300HV datasheet
ixbt42n300hv.pdf
Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans... See More ⇒
ixbt42n170a.pdf
Advance Technical Information BIMOSFETTM Monolithic VCES = 1700 V IXBH 42N170A Bipolar MOS Transistor IC25 = 42 A IXBT 42N170A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)... See More ⇒
ixbh42n170 ixbt42n170.pdf
High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin... See More ⇒
ixbt42n170.pdf
High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin... See More ⇒
Specs: IXBJ40N160 , IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , NGD8201N , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 .
History: MUBW30-06A7
Keywords - IXBT42N300HV transistor spec
IXBT42N300HV cross reference
IXBT42N300HV equivalent finder
IXBT42N300HV lookup
IXBT42N300HV substitution
IXBT42N300HV replacement
History: MUBW30-06A7
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