IXXN110N65B4H1 PDF and Equivalents Search

 

IXXN110N65B4H1 Specs and Replacement

Type Designator: IXXN110N65B4H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 215 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: SOT227

 IXXN110N65B4H1 Substitution

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IXXN110N65B4H1 datasheet

 ..1. Size:224K  ixys
 ixxn110n65b4h1.pdf pdf_icon

IXXN110N65B4H1

VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25 C to 175 C, RGE = 1M 6... See More ⇒

 4.1. Size:218K  ixys
 ixxn110n65c4h1.pdf pdf_icon

IXXN110N65B4H1

VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M ... See More ⇒

 9.1. Size:211K  ixys
 ixxn100n60b3h1.pdf pdf_icon

IXXN110N65B4H1

Advance Technical Information XPTTM 600V VCES = 600V IXXN100N60B3H1 GenX3TM w/ Diode IC90 = 100A VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous ... See More ⇒

Specs: IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , GT30F133 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 .

Keywords - IXXN110N65B4H1 transistor spec

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