IXXN110N65B4H1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXXN110N65B4H1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 215 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 46 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Package: SOT227
IXXN110N65B4H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXXN110N65B4H1 Datasheet (PDF)
ixxn110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 6
ixxn110n65c4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M
ixxn100n60b3h1.pdf
Advance Technical InformationXPTTM 600V VCES = 600VIXXN100N60B3H1GenX3TM w/ Diode IC90 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V E VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous
Datasheet: IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , CRG75T60AK3HD , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2