IXXH30N60C3 PDF and Equivalents Search

 

IXXH30N60C3 Specs and Replacement

Type Designator: IXXH30N60C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 76 pF

Package: TO247

 IXXH30N60C3 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXXH30N60C3 datasheet

 ..1. Size:214K  ixys
 ixxh30n60c3.pdf pdf_icon

IXXH30N60C3

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3 GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Cont... See More ⇒

 0.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N60C3

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM ... See More ⇒

 5.1. Size:170K  ixys
 ixxh30n60b3.pdf pdf_icon

IXXH30N60C3

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3 GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient ... See More ⇒

 5.2. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N60C3

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM... See More ⇒

SHOW MORE

Specs: IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , TGPF30N43P , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A .

History: IXXH150N60C3 | IXXH30N60B3

Keywords - IXXH30N60C3 transistor spec

 IXXH30N60C3 cross reference
 IXXH30N60C3 equivalent finder
 IXXH30N60C3 lookup
 IXXH30N60C3 substitution
 IXXH30N60C3 replacement

 

 

 

 

↑ Back to Top
.