All IGBT. HGTH12N40E1D Datasheet

 

HGTH12N40E1D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTH12N40E1D

Type: IGBT + Anti-Parallel Diode

Marking Code: G12N40E1D

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 12

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5

Maximum G-E Threshold Voltag |VGE(th)|, V: 4.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 50

Total Gate Charge (Qg), typ, nC: 19

Package: TO218

HGTH12N40E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTH12N40E1D Datasheet (PDF)

 ..1. Size:45K  1
 hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf

HGTH12N40E1D HGTH12N40E1D

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

 3.1. Size:333K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

HGTH12N40E1D HGTH12N40E1D

 3.2. Size:49K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

HGTH12N40E1D HGTH12N40E1D

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

 6.1. Size:45K  harris semi
 hgth12n4.pdf

HGTH12N40E1D HGTH12N40E1D

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

Datasheet: HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , IKW30N65WR5 , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 .

 

 
Back to Top