All IGBT. HGTH12N40E1D Datasheet

 

HGTH12N40E1D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTH12N40E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO218

HGTH12N40E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTH12N40E1D PDF doc:

2.1. hgth12n4.pdf Size:45K _harris_semi

HGTH12N40E1D
HGTH12N40E1D

HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max. EMITTER TFALL: 1s, 0.5s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANGE) Anti-Parall

5.1. hgt1s10n120bn_hgth10n120bn_hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTH12N40E1D
HGTH12N40E1D

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage swi

Datasheet: HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTG20N60A4 , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 .

 


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