All IGBT. IXGH40N60A Datasheet

 

IXGH40N60A Datasheet and Replacement


   Type Designator: IXGH40N60A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247AD
 

 IXGH40N60A substitution

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IXGH40N60A Datasheet (PDF)

 ..1. Size:52K  ixys
 ixgh40n60a.pdf pdf_icon

IXGH40N60A

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I

 5.1. Size:145K  ixys
 ixgh40n60c2.pdf pdf_icon

IXGH40N60A

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

 5.2. Size:52K  ixys
 ixgh40n60.pdf pdf_icon

IXGH40N60A

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 40 N60 600 V 75 A 2.5 VHigh speed IGBT IXGH/IXGM 40 N60A 600 V 75 A 3.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AIC90 TC = 90C40 A TO-204 AE (IXGM)I

 5.3. Size:162K  ixys
 ixgh40n60c2d1 ixgt40n60c2d1 ixgg40n60c2d1.pdf pdf_icon

IXGH40N60A

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

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Datasheet: IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 , GT30F132 , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXXH80N65B4 , IXXH80N65B4H1 , IXXK110N60B4H1 , IXXK110N65B4H1 .

Keywords - IXGH40N60A transistor datasheet

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