HGTH12N50C1D IGBT. Datasheet pdf. Equivalent
Type Designator: HGTH12N50C1D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 75
Maximum Collector-Emitter Voltage |Vce|, V: 500
Collector-Emitter saturation Voltage |Vcesat|, V: 4.5
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 12
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 50
Package: TO218
HGTH12N50C1D Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTH12N50C1D Datasheet (PDF)
7.1. hgth12n4.pdf Size:45K _harris_semi
HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC • 12A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR GATE • Low On-State Voltage • Fast Switching Speeds COLLECTOR • High Input Impedance (FLANG
9.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and • 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo
Datasheet: HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , IRG4PC50FD , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 .



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