IXXX160N65B4 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXXX160N65B4 Specs and Replacement

Type Designator: IXXX160N65B4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 940 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 310 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 64 nS

Coesⓘ - Output Capacitance, typ: 500 pF

Package: PLUS247

IXXX160N65B4 Substitution

- IGBT ⓘ Cross-Reference Search

IXXX160N65B4 datasheet

..1. Size:208K ixys
ixxx160n65b4.pdf pdf_icon

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4.1. Size:208K ixys
ixxx160n65c4.pdf pdf_icon

Preliminary Technical Information VCES = 650V XPTTM 650V IGBTs IXXK160N65C4 IC110 = 160A GenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V PLUS247 (IXXX) V... See More ⇒

9.1. Size:238K ixys
ixxx100n60b3h1.pdf pdf_icon

VCES = 600V XPTTM 600V IXXK100N60B3H1 IC100 = 100A GenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E Tab VGEM Transient 30... See More ⇒

9.2. Size:242K ixys
ixxk100n60c3h1 ixxx100n60c3h1.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin... See More ⇒