All IGBT. IXXX160N65B4 Datasheet

 

IXXX160N65B4 IGBT. Datasheet pdf. Equivalent

Type Designator: IXXX160N65B4

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 940

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 310

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 64

Maximum Collector Capacity (Cc), pF: 500

Package: PLUS247

IXXX160N65B4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXXX160N65B4 Datasheet (PDF)

1.1. ixxx160n65c4.pdf Size:208K _igbt_a

IXXX160N65B4
IXXX160N65B4

Preliminary Technical Information VCES = 650V XPTTM 650V IGBTs IXXK160N65C4 IC110 = 160A GenX4TM IXXX160N65C4 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V PLUS247 (IXXX) V

1.2. ixxx160n65b4.pdf Size:208K _igbt_a

IXXX160N65B4
IXXX160N65B4

Preliminary Technical Information VCES = 650V XPTTM 650V IGBTs IXXK160N65B4 IC110 = 160A GenX4TM IXXX160N65B4 ≤ ≤ VCE(sat) ≤ 1.80V ≤ ≤ tfi(typ) = 90ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V G C VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V E Tab VGES Continuous

5.1. ixxk100n60c3h1 ixxx100n60c3h1.pdf Size:242K _ixys

IXXX160N65B4
IXXX160N65B4

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 ? ? VCE(sat) ? 2.20V ? ? tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G C VCGR TJ = 25C to 150C, RGE = 1M? 600 V E Tab VGES Continuous 20 V VGEM T

5.2. ixxx110n60b4h1.pdf Size:313K _igbt_a

IXXX160N65B4
IXXX160N65B4

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 ≤ ≤ VCE(sat) ≤ 2.0V ≤ ≤ tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V Tab VGES Continuous

5.3. ixxx100n60b3h1.pdf Size:238K _igbt_a

IXXX160N65B4
IXXX160N65B4

VCES = 600V XPTTM 600V IXXK100N60B3H1 IC100 = 100A GenX3TM w/ Diode IXXX100N60B3H1 ≤ ≤ VCE(sat) ≤ 1.80V ≤ ≤ tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V E Tab VGEM Transient ±30

5.4. ixxx110n65b4h1.pdf Size:259K _igbt_a

IXXX160N65B4
IXXX160N65B4

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.5. ixxx100n60c3h1.pdf Size:240K _igbt_a

IXXX160N65B4
IXXX160N65B4

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 ≤ ≤ VCE(sat) ≤ 2.20V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E Tab VGES Contin

Datasheet: IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , HGTG20N60A4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 , IXYH20N65B3 .

 


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