All IGBT. HGTH12N50E1D Datasheet

 

HGTH12N50E1D Datasheet and Replacement


   Type Designator: HGTH12N50E1D
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G12N50E1D
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Qg ⓘ - Total Gate Charge, typ: 19 nC
   Package: TO218
 

 HGTH12N50E1D substitution

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HGTH12N50E1D Datasheet (PDF)

 ..1. Size:45K  1
 hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf pdf_icon

HGTH12N50E1D

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

 3.1. Size:333K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf pdf_icon

HGTH12N50E1D

 3.2. Size:49K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf pdf_icon

HGTH12N50E1D

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

 7.1. Size:45K  harris semi
 hgth12n4.pdf pdf_icon

HGTH12N50E1D

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

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Datasheet: HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , RJP63K2DPP-M0 , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D .

Keywords - HGTH12N50E1D transistor datasheet

 HGTH12N50E1D cross reference
 HGTH12N50E1D equivalent finder
 HGTH12N50E1D lookup
 HGTH12N50E1D substitution
 HGTH12N50E1D replacement

 

 
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