IXYH30N65C3 PDF and Equivalents Search

 

IXYH30N65C3 Specs and Replacement

Type Designator: IXYH30N65C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO247

 IXYH30N65C3 Substitution

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IXYH30N65C3 datasheet

 ..1. Size:188K  ixys
ixyh30n65c3.pdf pdf_icon

IXYH30N65C3

XPTTM 650V IGBT VCES = 650V IXYP30N65C3 GenX3TM IC110 = 30A IXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G C Tab VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V TO-247 VGES Conti... See More ⇒

 0.1. Size:268K  ixys
ixyh30n65c3h1.pdf pdf_icon

IXYH30N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYT30N65C3H1HV GenX3TM w/ Sonic IC110 = 30A IXYH30N65C3H1 Diode VCE(sat) 2.7V tfi(typ) = 24ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-268HV Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25... See More ⇒

 5.1. Size:204K  ixys
ixyh30n65b3d1.pdf pdf_icon

IXYH30N65C3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH30N65B3D1 GenX3TM w/ Diode IC110 = 30A IXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, ... See More ⇒

 7.1. Size:188K  ixys
ixyp30n120c3 ixyh30n120c3.pdf pdf_icon

IXYH30N65C3

1200V XPTTM VCES = 1200V IXYP30N120C3 GenX3TM IGBTs IC110 = 30A IXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 2... See More ⇒

Specs: IXYH120N65C3 , IXYH20N65B3 , IXYH20N65C3 , IXYH24N90C3 , IXYH24N90C3D1 , IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , RJP30H2A , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 .

Keywords - IXYH30N65C3 transistor spec

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