IXYH30N65C3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYH30N65C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 75 pF
Qgⓘ - Total Gate Charge, typ: 44 nC
Package: TO247
IXYH30N65C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYH30N65C3 Datasheet (PDF)
ixyh30n65c3.pdf
XPTTM 650V IGBT VCES = 650VIXYP30N65C3GenX3TM IC110 = 30AIXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGCTabVCES TJ = 25C to 175C 650 V EVCGR TJ = 25C to 175C, RGE = 1M 650 VTO-247VGES Conti
ixyh30n65c3h1.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYT30N65C3H1HVGenX3TM w/ Sonic IC110 = 30AIXYH30N65C3H1Diode VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VEVCGR TJ = 25
ixyh30n65b3d1.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH30N65B3D1GenX3TM w/ Diode IC110 = 30AIXYQ30N65B3D1 VCE(sat) 2.1V tfi(typ) = 33nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,
ixyp30n120c3 ixyh30n120c3.pdf
1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2
ixyh30n120c3.pdf
N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyh30n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH30N120C3D1GenX3TM w/ Diode IC110 = 30AVCE(sat) 3.3Vtfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = Collect
ixyh30n450hv.pdf
Advance Technical InformationHigh Voltage XPTTMVCES = 4500VIXYT30N450HVIGBTIXYH30N450HVIC110 = 30AVCE(sat) 3.9VTO-268HV (IXYT)GE C (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VTO-247HV (IXYH)VCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 60 AGI
ixyh30n170c.pdf
Advance Technical InformationVCES = 1700VHigh Voltage IXYH30N170CIC110 = 30AXPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1700 VGVCGR TJ = 25C to 175C, RGE = 1M 1700 VC TabEVGES Continuous 20 VVGEM Transient 30 VG =
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2