All IGBT. IXYP20N65B3D1 Datasheet

 

IXYP20N65B3D1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXYP20N65B3D1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 230

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 58

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 82

Package: TO220

IXYP20N65B3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

 

IXYP20N65B3D1 Datasheet (PDF)

1.1. ixyp20n65b3d1.pdf Size:195K _igbt_a

IXYP20N65B3D1
IXYP20N65B3D1

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65B3D1 GenX3TM w/Diode IC110 = 20A   VCE(sat)    2.10V     tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V C Tab E VCGR TJ = 25°C to 175°C, RGE = 1M

1.2. ixyp20n65c3d1.pdf Size:250K _igbt_a

IXYP20N65B3D1
IXYP20N65B3D1

XPTTM 650V IGBT VCES = 650V IXYA20N65C3D1 GenX3TM w/Diode IC110 = 20A IXYP20N65C3D1   VCE(sat)    2.50V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 175°C 650 V C (Tab) VCGR TJ = 25°C to 175°C, RGE = 1M

 1.3. ixyp20n65c3d1m.pdf Size:195K _igbt_a

IXYP20N65B3D1
IXYP20N65B3D1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP20N65C3D1M GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE =

1.4. ixyp20n65b3.pdf Size:273K _igbt_a

IXYP20N65B3D1
IXYP20N65B3D1

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3   VCE(sat)    2.10V     IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25°C to 175°C 650

Datasheet: IXYH24N90C3 , IXYH24N90C3D1 , IXYH30N170C , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , RJH60F5DPK , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 .

 
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