All IGBT. IXYQ40N65C3D1 Datasheet

 

IXYQ40N65C3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYQ40N65C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 205 pF
   Qgⓘ - Total Gate Charge, typ: 66 nC
   Package: TO3P

 IXYQ40N65C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYQ40N65C3D1 Datasheet (PDF)

 ..1. Size:197K  ixys
 ixyq40n65c3d1.pdf

IXYQ40N65C3D1 IXYQ40N65C3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175

 5.1. Size:197K  ixys
 ixyq40n65b3d1.pdf

IXYQ40N65C3D1 IXYQ40N65C3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,

Datasheet: IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IRG7IC28U , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV .

 

 
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