IXYX100N65B3D1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYX100N65B3D1 Specs and Replacement

Type Designator: IXYX100N65B3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 225 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 470 pF

Package: PLUS247

IXYX100N65B3D1 Substitution

- IGBT ⓘ Cross-Reference Search

IXYX100N65B3D1 datasheet

..1. Size:229K ixys
ixyx100n65b3d1.pdf pdf_icon

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4.1. Size:227K ixys
ixyx100n65c3d1.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G C VCGR TJ = 25 C to... See More ⇒

6.1. Size:205K ixys
ixyx100n120b3.pdf pdf_icon

Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 175 C 1200 V Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V PLUS247 (IX... See More ⇒

6.2. Size:289K ixys
ixyk100n120c3 ixyx100n120c3.pdf pdf_icon

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous ... See More ⇒