IXYH50N65C3H1 PDF and Equivalents Search

 

IXYH50N65C3H1 Specs and Replacement

Type Designator: IXYH50N65C3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 130 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Package: TO247

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IXYH50N65C3H1 datasheet

 ..1. Size:251K  ixys
 ixyh50n65c3h1.pdf pdf_icon

IXYH50N65C3H1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYH50N65C3H1 GenX3TM w/ Sonic IC110 = 50A Diode VCE(sat) 2.10V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1... See More ⇒

 3.1. Size:271K  ixys
 ixyh50n65c3.pdf pdf_icon

IXYH50N65C3H1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA50N65C3 GenX3TM IC110 = 50A IXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3 tfi(typ) = 26ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 ... See More ⇒

 3.2. Size:188K  ixys
 ixyh50n65c3d1.pdf pdf_icon

IXYH50N65C3H1

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYH50N65C3D1 GenX3TM w/ Diode IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M ... See More ⇒

 7.1. Size:184K  ixys
 ixyh50n120c3d1.pdf pdf_icon

IXYH50N65C3H1

1200V XPTTM IGBT VCES = 1200V IXYH50N120C3D1 GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VG... See More ⇒

SHOW MORE

Specs: IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , CRG60T60AK3HD , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 .

Keywords - IXYH50N65C3H1 transistor spec

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