All IGBT. IXYH50N65C3H1 Datasheet

 

IXYH50N65C3H1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYH50N65C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 35 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO247

 IXYH50N65C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYH50N65C3H1 Datasheet (PDF)

 ..1. Size:251K  ixys
 ixyh50n65c3h1.pdf

IXYH50N65C3H1 IXYH50N65C3H1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3H1GenX3TM w/ Sonic IC110 = 50ADiode VCE(sat) 2.10V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1

 3.1. Size:271K  ixys
 ixyh50n65c3.pdf

IXYH50N65C3H1 IXYH50N65C3H1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA50N65C3GenX3TM IC110 = 50AIXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175

 3.2. Size:188K  ixys
 ixyh50n65c3d1.pdf

IXYH50N65C3H1 IXYH50N65C3H1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3D1GenX3TM w/ Diode IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M

 7.1. Size:184K  ixys
 ixyh50n120c3d1.pdf

IXYH50N65C3H1 IXYH50N65C3H1

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3D1GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVG

 7.2. Size:210K  ixys
 ixyh50n120c3.pdf

IXYH50N65C3H1 IXYH50N65C3H1

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3GenX3TM IC110 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 10

Datasheet: IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , GT30F131 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 .

 

 
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