IXYH75N65C3 PDF and Equivalents Search

 

IXYH75N65C3 Specs and Replacement

Type Designator: IXYH75N65C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 175 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 65 nS

Coesⓘ - Output Capacitance, typ: 190 pF

Package: TO247

 IXYH75N65C3 Substitution

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IXYH75N65C3 datasheet

 ..1. Size:233K  ixys
ixyh75n65c3.pdf pdf_icon

IXYH75N65C3

VCES = 650V XPTTM 650V IGBT IXYH75N65C3 IC110 = 75A GenX3TM VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V G C Tab VGEM ... See More ⇒

 0.1. Size:239K  ixys
ixyh75n65c3h1.pdf pdf_icon

IXYH75N65C3

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3H1 IC110 = 75A GenX3TM w/ Sonic VCE(sat) 2.3V Diode tfi(typ) = 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = ... See More ⇒

 0.2. Size:245K  ixys
ixyh75n65c3d1.pdf pdf_icon

IXYH75N65C3

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3D1 IC110 = 75A GenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 6... See More ⇒

Specs: IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , NGD8201N , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 .

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