IXYH75N65C3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYH75N65C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 175 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Qgⓘ - Total Gate Charge, typ: 122 nC
Package: TO247
IXYH75N65C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYH75N65C3 Datasheet (PDF)
ixyh75n65c3.pdf
VCES = 650VXPTTM 650V IGBT IXYH75N65C3IC110 = 75AGenX3TM VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VGC TabVGEM
ixyh75n65c3h1.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBT IXYH75N65C3H1IC110 = 75AGenX3TM w/ Sonic VCE(sat) 2.3V Diodetfi(typ) = 50nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =
ixyh75n65c3d1.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBT IXYH75N65C3D1IC110 = 75AGenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 6
Datasheet: IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IHW40T60 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2