HGTP10N40C1D Datasheet. Specs and Replacement

Type Designator: HGTP10N40C1D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 17.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: TO220

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HGTP10N40C1D datasheet

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HGTP10N40C1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impeda... See More ⇒

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HGTP10N40C1D

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HGTP10N40C1D

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance ... See More ⇒

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HGTP10N40C1D

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Specs: HGTH12N50C1, HGTH12N50C1D, HGTH12N50E1, HGTH12N50E1D, HGTM12N40C1, HGTM12N40E1, HGTP10N120BN, HGTP10N40C1, FGH60N60SMD, HGTP10N40E1, HGTP10N40E1D, HGTP10N40F1D, HGTP10N50C1, HGTP10N50C1D, HGTP10N50E1, HGTP10N50E1D, HGTP10N50F1D

Keywords - HGTP10N40C1D transistor spec

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