HGTP10N40C1D Datasheet and Replacement
Type Designator: HGTP10N40C1D
Type: IGBT + Anti-Parallel Diode
Marking Code: 10N40C1D
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 17.5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Qgⓘ - Total Gate Charge, typ: 19 nC
Package: TO220
- IGBT Cross-Reference
HGTP10N40C1D Datasheet (PDF)
hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda
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hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
Datasheet: HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , FGD4536 , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - HGTP10N40C1D transistor datasheet
HGTP10N40C1D cross reference
HGTP10N40C1D equivalent finder
HGTP10N40C1D lookup
HGTP10N40C1D substitution
HGTP10N40C1D replacement
History: NCE30TD60BP | FD200R12PT4_B6



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