HGTP10N50C1 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTP10N50C1
Type: IGBT
Marking Code: G10N50C1
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Qgⓘ - Total Gate Charge, typ: 19 nC
Package: TO220
HGTP10N50C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTP10N50C1 Datasheet (PDF)
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Datasheet: HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , SGT40N60NPFDPN , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTM12N50C1 , HGTM12N50E1 , HGTP12N60A4 .
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