All IGBT. HGTP10N50C1 Datasheet

 

HGTP10N50C1 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP10N50C1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO220

HGTP10N50C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP10N50C1 Datasheet (PDF)

0.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP10N50C1
HGTP10N50C1

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impeda

7.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTP10N50C1
HGTP10N50C1

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and • 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo

7.2. hgtp10n4.pdf Size:49K _harris_semi

HGTP10N50C1
HGTP10N50C1

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE(ON): 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance •

 7.3. hgtp10n40f.pdf Size:43K _harris_semi

HGTP10N50C1
HGTP10N50C1

HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance • Low Conduction Loss COLLECTOR (FLANGE) • Anti-Parallel Diode • tRR < 60ns Des

Datasheet: HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , 10N40F1D , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTP12N40C1 , HGTP12N40E1 , HGTP12N60A4 .

 

 
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