RGTH80TS65 PDF and Equivalents Search

 

RGTH80TS65 Specs and Replacement

Type Designator: RGTH80TS65

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 117 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO247

 RGTH80TS65 Substitution

- IGBT ⓘ Cross-Reference Search

 

RGTH80TS65 datasheet

 ..1. Size:653K  rohm
 rgth80ts65.pdf pdf_icon

RGTH80TS65

RGTH80TS65 650V 40A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 40A VCE(sat) (Typ.) 1.6V PD 234W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplica... See More ⇒

 0.1. Size:750K  rohm
 rgth80ts65d.pdf pdf_icon

RGTH80TS65

RGTH80TS65D 650V 40A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 40A VCE(sat) (Typ.) 1.6V PD 234W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Bui... See More ⇒

Specs: RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , MBQ60T65PES , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP .

Keywords - RGTH80TS65 transistor spec

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