All IGBT. RGTH80TS65 Datasheet

 

RGTH80TS65 Datasheet and Replacement


   Type Designator: RGTH80TS65
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 117 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Package: TO247
      - IGBT Cross-Reference

 

RGTH80TS65 Datasheet (PDF)

 ..1. Size:653K  rohm
 rgth80ts65.pdf pdf_icon

RGTH80TS65

RGTH80TS65 650V 40A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)40AVCE(sat) (Typ.)1.6VPD234W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant(3) lApplica

 0.1. Size:750K  rohm
 rgth80ts65d.pdf pdf_icon

RGTH80TS65

RGTH80TS65D 650V 40A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)40AVCE(sat) (Typ.)1.6VPD234W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector *1 3) Low Switching Loss & Soft Switching(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Bui

Datasheet: RGTH00TS65 , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , GT30J124 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP .

History: SGL60N90D | FGH40N60SMDF-F085 | MGW12N120 | IXGJ50N60C4D1 | IXGT24N60C | SGL50N60RUFD | RGTH60TS65

Keywords - RGTH80TS65 transistor datasheet

 RGTH80TS65 cross reference
 RGTH80TS65 equivalent finder
 RGTH80TS65 lookup
 RGTH80TS65 substitution
 RGTH80TS65 replacement

 

 
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