APT13GP120BDQ1G Specs and Replacement
Type Designator: APT13GP120BDQ1G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 41 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO247
APT13GP120BDQ1G Substitution - IGBT ⓘ Cross-Reference Search
APT13GP120BDQ1G datasheet
apt13gp120bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency... See More ⇒
apt13gp120bdf1.pdf
APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide... See More ⇒
apt13gp120b.pdf
APT13GP120B TYPICAL PERFORMANCE CURVES APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWE... See More ⇒
apt13gp120bg.pdf
TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B POWER MOS 7 IGBT D3PAK S C The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G E Through Technology this IGBT is ideal for many high frequency, high voltage switching G application... See More ⇒
Specs: HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , RJP30E2DPP-M0 , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G .
History: APT100GN120JDQ4
Keywords - APT13GP120BDQ1G transistor spec
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History: APT100GN120JDQ4
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