All IGBT. HGTP10N50E1D Datasheet

 

HGTP10N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP10N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

HGTP10N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTP10N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP10N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

HGTP10N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP10N50E1D Datasheet (PDF)

0.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP10N50E1D
HGTP10N50E1D

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

7.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTP10N50E1D
HGTP10N50E1D

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

7.2. hgtp10n4.pdf Size:49K _harris_semi

HGTP10N50E1D
HGTP10N50E1D

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

 7.3. hgtp10n40f.pdf Size:43K _harris_semi

HGTP10N50E1D
HGTP10N50E1D

HGTP10N40F1D,S E M I C O N D U C T O RHGTP10N50F1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V Latch Free OperationEMITTER Typical Fall Time

Datasheet: HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , IRG4BC30W-S , HGTP10N50F1D , HGTP11N120CN , HGTP12N40C1 , HGTP12N40E1 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D .

 

 
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