HGTP10N50E1D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

HGTP10N50E1D Specs and Replacement

   Type Designator: HGTP10N50E1D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 17.5 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: TO220

HGTP10N50E1D Substitution

- IGBT ⓘ Cross-Reference Search

HGTP10N50E1D datasheet

..1. Size:47K harris semi
hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf pdf_icon

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impeda... See More ⇒

3.1. Size:333K 1
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... See More ⇒

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hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf pdf_icon

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance ... See More ⇒

5.1. Size:293K 1
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