All IGBT. APT50GP60LDLG Datasheet

 

APT50GP60LDLG IGBT. Datasheet pdf. Equivalent


   Type Designator: APT50GP60LDLG
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 465 pF
   Qgⓘ - Total Gate Charge, typ: 165 nC
   Package: TO264

 APT50GP60LDLG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT50GP60LDLG Datasheet (PDF)

 ..1. Size:189K  microsemi
 apt50gp60ldlg.pdf

APT50GP60LDLG APT50GP60LDLG

TYPICAL PERFORMANCE CURVESAPT50GP60LDL(G)APT50GP60LDL(G)600V, 50A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo

 5.1. Size:196K  apt
 apt50gp60b2df2.pdf

APT50GP60LDLG APT50GP60LDLG

TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

 5.2. Size:425K  apt
 apt50gp60b2dq2g.pdf

APT50GP60LDLG APT50GP60LDLG

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 5.3. Size:96K  apt
 apt50gp60sg.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

 5.4. Size:210K  apt
 apt50gp60jdf2.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPfiswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low

 5.5. Size:95K  apt
 apt50gp60s.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

 5.6. Size:88K  apt
 apt50gp60b.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge

 5.7. Size:450K  apt
 apt50gp60jdq2.pdf

APT50GP60LDLG APT50GP60LDLG

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 5.8. Size:105K  apt
 apt50gp60j.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low Gat

 5.9. Size:96K  apt
 apt50gp60bg.pdf

APT50GP60LDLG APT50GP60LDLG

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

Datasheet: APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , SGT40N60FD2PN , APT50GT120B2RDLG , APT50GT120LRDQ2G , APT65GP60B2G , APT65GP60JDQ2 , APT75GN120JDQ3 , APT75GN60BDQ2G , APT75GN60LDQ3G , APT75GN60SDQ2G .

 

 
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