All IGBT. APT75GN120JDQ3 Datasheet

 

APT75GN120JDQ3 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT75GN120JDQ3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 379 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 124 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Qgⓘ - Total Gate Charge, typ: 425 nC
   Package: SOT227

 APT75GN120JDQ3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT75GN120JDQ3 Datasheet (PDF)

 ..1. Size:331K  apt
 apt75gn120jdq3.pdf

APT75GN120JDQ3 APT75GN120JDQ3

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

 3.1. Size:420K  apt
 apt75gn120j.pdf

APT75GN120JDQ3 APT75GN120JDQ3

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 4.1. Size:82K  apt
 apt75gn120b2g.pdf

APT75GN120JDQ3 APT75GN120JDQ3

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

 4.2. Size:82K  apt
 apt75gn120lg.pdf

APT75GN120JDQ3 APT75GN120JDQ3

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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