APT75GN120JDQ3 Datasheet. Specs and Replacement
Type Designator: APT75GN120JDQ3 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 379 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 124 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 275 pF
Package: SOT227
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APT75GN120JDQ3 datasheet
apt75gn120jdq3.pdf
TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil... See More ⇒
apt75gn120j.pdf
TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g... See More ⇒
apt75gn120b2g.pdf
TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform... See More ⇒
apt75gn120lg.pdf
TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform... See More ⇒
Specs: APT50GF120JRDQ3, APT50GF120LRG, APT50GP60B2DQ2G, APT50GP60LDLG, APT50GT120B2RDLG, APT50GT120LRDQ2G, APT65GP60B2G, APT65GP60JDQ2, IRGP4063D, APT75GN60BDQ2G, APT75GN60LDQ3G, APT75GN60SDQ2G, APT75GT120JRDQ3, ART10U120, ART20U120, ART30U120, ART40U120
Keywords - APT75GN120JDQ3 transistor spec
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History: SGT25T120FD1P7
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