All IGBT. HGTP11N120CN Datasheet

 

HGTP11N120CN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP11N120CN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 43

Maximum Junction Temperature (Tj), °C: 150

Package: TO220

HGTP11N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTP11N120CN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP11N120CN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 43

Maximum Junction Temperature (Tj), °C: 150

Package: TO220

HGTP11N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP11N120CN Datasheet (PDF)

0.1. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTG11N120CN, HGTP11N120CN,HGT1S11N120CNSData Sheet December 200143A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oCHGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

9.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The

9.2. hgtd1n120bns hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150

 9.3. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

9.4. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

 9.5. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

9.6. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP11N120CN
HGTP11N120CN

HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

9.7. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP12N60C3, HGT1S12N60C3,S E M I C O N D U C T O R HGT1S12N60C3SAugust 1995 24A, 600V, UFS Series N-Channel IGBTFeatures Packages JEDEC TO-220ABEMITTER 24A, 600V at TC = +25oCCOLLECTORGATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oCCOLLECTOR(FLANGE) Short Circuit Rating Low Conduction LossJEDEC TO-262AADescriptionEMITTER

9.8. hgtp12n6.pdf Size:40K _harris_semi

HGTP11N120CN
HGTP11N120CN

S E M I C O N D U C T O R HGTP12N60D112A, 600V N-Channel IGBTApril 1995Features PackageJEDEC TO-220AB 12A, 600VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time

9.9. hgtp14n4.pdf Size:110K _harris_semi

HGTP11N120CN
HGTP11N120CN

S E M I C O N D U C T O R HGTP14N40F3VL14A, 400V N-Channel,Logic Level Voltage Clamping IGBTApril 1995Features Package Logic Level Gate DriveJEDEC TO-220AB Internal Voltage ClampEMITTERCOLLECTOR ESD Gate ProtectionGATE TJ = +150oCCOLLECTOR(FLANGE) Ignition Energy CapableApplications Automotive Ignition Small Engine Ignition Fuel Igni

9.10. hgtp15n4.pdf Size:46K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP15N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E115A, 20A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 15A and 20A, 400V and 500VEMITTER VCE(ON) 2.5VCOLLECTOR TFI 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance No Ant

9.11. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

9.12. hgtp14n3.pdf Size:118K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP14N36G3VL,S E M I C O N D U C T O R HGT1S14N36G3VL,HGT1S14N36G3VLS14A, 360V N-Channel,June 1995Logic Level, Voltage Clamping IGBTsFeatures PackagesJEDEC TO-220AB Logic Level Gate DriveEMITTERCOLLECTOR Internal Voltage ClampGATE ESD Gate ProtectionCOLLECTOR(FLANGE) TJ = 175oC Ignition Energy CapableJEDEC TO-262AADescriptionEMITTERCOLLE

9.13. hgtp10n4.pdf Size:49K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

9.14. hgtp10n40f.pdf Size:43K _harris_semi

HGTP11N120CN
HGTP11N120CN

HGTP10N40F1D,S E M I C O N D U C T O RHGTP10N50F1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V Latch Free OperationEMITTER Typical Fall Time

Datasheet: HGTP10N40E1 , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , RJH60F5DPK , HGTP12N40C1 , HGTP12N40E1 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D .

 

 
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