SKM145GB176D IGBT. Datasheet pdf. Equivalent
Type Designator: SKM145GB176D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 370 pF
Qgⓘ - Total Gate Charge, typ: 800 nC
Package: MODULE
SKM145GB176D Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKM145GB176D Datasheet (PDF)
skm145gb124d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GB 124 DIC Tcase = 25/70 C 190 / 145 AICM Tcase = 25/70 C; tp = 1 ms 380 / 290 AVGES 20 VPtot per IGBT, Tcase = 25 C 800 WTj, (Tstg) 40 ... + 150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40040 Class Fclimate DIN IEC
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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