All IGBT. SKM150GB12V Datasheet

 

SKM150GB12V IGBT. Datasheet pdf. Equivalent

Type Designator: SKM150GB12V

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 231

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 32

Maximum Collector Capacity (Cc), pF: 890

Package: MODULE

SKM150GB12V Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM150GB12V Datasheet (PDF)

1.1. skm150gb173d.pdf Size:706K _igbt

SKM150GB12V
SKM150GB12V



1.2. skm150gb12vg.pdf Size:435K _igbt

SKM150GB12V
SKM150GB12V

SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 222 A Tj = 175 °C Tc =80°C 169 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 3 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 187 A Tj = 175 °C SKM150GB12VG Tc =80°C 140 A IFno

1.3. skm150gb123d.pdf Size:599K _igbt

SKM150GB12V
SKM150GB12V



1.4. skm150gb12t4g.pdf Size:401K _igbt

SKM150GB12V
SKM150GB12V

SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 223 A Tj = 175 °C Tc =80°C 172 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 183 A Tj = 175 °C SKM150GB12T4G Tc =80°

1.5. skm150gb12t4.pdf Size:457K _igbt

SKM150GB12V
SKM150GB12V

SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 232 A Tj = 175 °C Tc =80°C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 189 A Tj = 175 °C SKM150GB12T4 Tc =80°C

1.6. skm150gb12v.pdf Size:491K _igbt

SKM150GB12V
SKM150GB12V

SKM150GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 231 A Tj = 175 °C Tc =80°C 176 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 189 A Tj = 175 °C SKM150GB12V Tc =80°C 141 A IFnom

Datasheet: SKM145GAL176D , SKM145GB066D , SKM145GB176D , SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , SKM150GB12T4 , SKM150GB12T4G , IRGB20B60PD1 , SKM150GB12VG , SKM150GM12T4G , SML50HB06 , SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 .

 


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