All IGBT. SPM1002 Datasheet

 

SPM1002 IGBT. Datasheet pdf. Equivalent

Type Designator: SPM1002

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Collector Current |Ic|, A: 19

Maximum Junction Temperature (Tj), °C: 150

Package: MODULE

SPM1002 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPM1002 Datasheet (PDF)

1.1. spm1002.pdf Size:302K _igbt

SPM1002
SPM1002

SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION:  600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT  SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT

4.1. spm1001.pdf Size:323K _igbt

SPM1002
SPM1002

SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION:  600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT  600V, 22A BRAKE MOSFET  INTEGRAT

4.2. spm1003.pdf Size:382K _igbt

SPM1002
SPM1002

SENSITRON SPM1003 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION:  1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.  1200 VOLT, 133 AMP INRUSH THYRISTOR (SCR).  AlSiC BASE PLATE FOR HIGH

 4.3. spm1006.pdf Size:279K _igbt

SPM1002
SPM1002

 SENSITRON SPM1006 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5384, Rev. B 600 VOLT, 40 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE Features  Trench stop third generation IGBT  Soft, fast recovery diode for minimal EMI  Isolated base plate  Aluminum nitride substrate  Light weight low profile standard package  High temperature engineering plast

4.4. spm1005.pdf Size:315K _igbt

SPM1002
SPM1002

SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features  SiC Free wheel diode – zero reverse recovery loss  Isolated base plate  Low thermal impedance  Aluminum Nitride base  Light weight low profile standard package  High temperat

 4.5. spm1004.pdf Size:375K _igbt

SPM1002
SPM1002

SENSITRON SPM1004 SEMICONDUCTOR TECHNICAL DATA DATASHEET 5280, Rev. - Three-Phase IGBT BRIDGE + HIGH SIDE BRAKE IGBT DESCRIPTION:  1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.  AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLE CAPABILITY.  LOW PROFILE L

Datasheet: SKM150GAR12T4 , SKM150GB12T4 , SKM150GB12T4G , SKM150GB12V , SKM150GB12VG , SKM150GM12T4G , SML50HB06 , SPM1001 , IRGP4062D , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , SSM28G45EM , STGP35HF60W .

Back to Top

 


SPM1002
  SPM1002
  SPM1002
 

social 

LIST

Last Update

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

Back to Top