All IGBT. DM2G200SH6A Datasheet

 

DM2G200SH6A Datasheet and Replacement


   Type Designator: DM2G200SH6A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1040 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 85 nS
   Qgⓘ - Total Gate Charge, typ: 1500 nC
   Package: MODULE
      - IGBT Cross-Reference

 

DM2G200SH6A Datasheet (PDF)

 ..1. Size:523K  dawin
 dm2g200sh6a.pdf pdf_icon

DM2G200SH6A

D WTMD WTMDM2G200SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto

 4.1. Size:305K  dawin
 dm2g200sh6n.pdf pdf_icon

DM2G200SH6A

D WTMD WTMDM2G200SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive

 5.1. Size:198K  dawin
 dm2g200sh12ae.pdf pdf_icon

DM2G200SH6A

PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G200SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul

 5.2. Size:66K  dawin
 dm2g200sh12a.pdf pdf_icon

DM2G200SH6A

PreliminaryD WTMD WTMMar. 2008DM2G200SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste

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History: F3L15R12W2H3_B27

Keywords - DM2G200SH6A transistor datasheet

 DM2G200SH6A cross reference
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