DM2G300SH12A IGBT. Datasheet pdf. Equivalent
Type Designator: DM2G300SH12A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 1450 pF
Qgⓘ - Total Gate Charge, typ: 1850 nC
Package: MODULE
DM2G300SH12A Transistor Equivalent Substitute - IGBT Cross-Reference Search
DM2G300SH12A Datasheet (PDF)
dm2g300sh12a.pdf
PreliminaryD WTMD WTMDM2G300SH12ADAWIN ElectronicsDAWIN ElectronicsMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package Equivalent Circuit and PackageDAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul
dm2g300sh6a.pdf
DM2G300SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
dm2g300sh6ne.pdf
D WTMD WTMDM2G300SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
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