DM2G400SH6A Datasheet and Replacement
Type Designator: DM2G400SH6A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 120 nS
Package: MODULE
DM2G400SH6A substitution
DM2G400SH6A Datasheet (PDF)
dm2g400sh6a.pdf

DM2G400SH6AAug. 2009High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching los
dm2g400sh6n.pdf

DM2G400SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar
Datasheet: DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , RJP30E2DPP-M0 , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S .
History: DM2G100SH6A
Keywords - DM2G400SH6A transistor datasheet
DM2G400SH6A cross reference
DM2G400SH6A equivalent finder
DM2G400SH6A lookup
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History: DM2G100SH6A



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