IXYP30N120C3 Datasheet and Replacement
Type Designator: IXYP30N120C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 46 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qgⓘ - Total Gate Charge, typ: 69 nC
Package: TO220
IXYP30N120C3 Datasheet (PDF)
ixyp30n120c3 ixyh30n120c3.pdf

1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2
ixyp30n120c3.pdf

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyp30n65c3.pdf

XPTTM 650V IGBT VCES = 650VIXYP30N65C3GenX3TM IC110 = 30AIXYH30N65C3 VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsGCTabVCES TJ = 25C to 175C 650 V EVCGR TJ = 25C to 175C, RGE = 1M 650 VTO-247VGES Conti
Datasheet: IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , SGT40N60FD2PN , IXYR100N120C3 , IXYH40N120B3 , IXYH40N120B3D1 , IXYH40N120C3 , IXYH40N120C3D1 , IXYH50N120C3D1 , IXYK100N120C3 , IXYK120N120C3 .
History: APT100GT120JR | APT65GP60JDQ2
Keywords - IXYP30N120C3 transistor datasheet
IXYP30N120C3 cross reference
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History: APT100GT120JR | APT65GP60JDQ2



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