All IGBT. IXYH40N120B3D1 Datasheet

 

IXYH40N120B3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYH40N120B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 86 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 157 pF
   Qgⓘ - Total Gate Charge, typ: 87 nC
   Package: TO247

 IXYH40N120B3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYH40N120B3D1 Datasheet (PDF)

 ..1. Size:231K  ixys
 ixyh40n120b3d1.pdf

IXYH40N120B3D1 IXYH40N120B3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3D1GenX3TM w/ Diode IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC

 2.1. Size:215K  ixys
 ixyh40n120b3.pdf

IXYH40N120B3D1 IXYH40N120B3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120B3GenX3TM IC110 = 40A VCE(sat) 2.9V tfi(typ) = 183nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsGC TabVCES TJ = 25C to 175C 1200 V EVCGR TJ = 25C to 175C, RGE = 1M 1200 VG = Gate C = CollectorVGES Continuous 20 VE = Emitter Tab = C

 4.1. Size:252K  ixys
 ixyh40n120c3.pdf

IXYH40N120B3D1 IXYH40N120B3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120C3GenX3TM IC110 = 40A VCE(sat) 3.5V tfi(typ) = 50nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transien

 4.2. Size:267K  ixys
 ixyh40n120c3d1.pdf

IXYH40N120B3D1 IXYH40N120B3D1

1200V XPTTM IGBT VCES = 1200VIXYH40N120C3D1GenX3TM w/ Diode IC90 = 40A VCE(sat) 3.5V tfi(typ) = 50nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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