All IGBT. HGTP14N36G3VL Datasheet

 

HGTP14N36G3VL IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP14N36G3VL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100W

Maximum Collector-Emitter Voltage |Vce|, V: 360V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.45V

Maximum Gate-Emitter Voltage |Veg|, V: 10V

Maximum Collector Current |Ic|, A: 14A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 7000

Package: TO220AB

HGTP14N36G3VL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP14N36G3VL Datasheet (PDF)

2.1. hgtp14n3.pdf Size:118K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP14N36G3VL, S E M I C O N D U C T O R HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, June 1995 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB Logic Level Gate Drive EMITTER COLLECTOR Internal Voltage Clamp GATE ESD Gate Protection COLLECTOR (FLANGE) TJ = 175oC Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLECTOR This N-

3.1. hgtp14n4.pdf Size:110K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

S E M I C O N D U C T O R HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995 Features Package Logic Level Gate Drive JEDEC TO-220AB Internal Voltage Clamp EMITTER COLLECTOR ESD Gate Protection GATE TJ = +150oC COLLECTOR (FLANGE) Ignition Energy Capable Applications Automotive Ignition Small Engine Ignition Fuel Ignitor Symbol Descri

5.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage swi

5.2. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

5.3. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

5.4. hgtd1n120bns hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC combin

5.5. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage

5.6. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

5.7. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

5.8. hgtp10n4.pdf Size:49K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON): 2.5V Max. COLLECTOR TFI: 1s, 0.5s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance No Anti-Parallel D

5.9. hgtp10n40f.pdf Size:43K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V Latch Free Operation EMITTER Typical Fall Time < 1.4s COLLECTOR GATE High Input Impedance Low Conduction Loss COLLECTOR (FLANGE) Anti-Parallel Diode tRR < 60ns Description The IGBT

5.10. hgtp12n6.pdf Size:40K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB 12A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time <500ns GATE High Input Impedance COLLECTOR Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Terminal D

5.11. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR

5.12. hgtp15n4.pdf Size:46K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP15N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 15A and 20A, 400V and 500V EMITTER VCE(ON) 2.5V COLLECTOR TFI 1s, 0.5s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance No Anti-Parallel Diode A

5.13. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP14N36G3VL
HGTP14N36G3VL

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max. EMITTER COLLECTOR TFALL: 1s, 0.5s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impedance Anti-Paral

Datasheet: HGTP12N40E1 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , G12N60C3D , HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |