All IGBT. SG200N06S Datasheet

 

SG200N06S IGBT. Datasheet pdf. Equivalent


   Type Designator: SG200N06S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 600 pF
   Qgⓘ - Total Gate Charge, typ: 465 nC
   Package: SOT227

 SG200N06S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SG200N06S Datasheet (PDF)

 ..1. Size:153K  sirectifier
 sg200n06s.pdf

SG200N06S SG200N06S

SG200N06SDiscrete IGBTsDim. Millimeter InchesCDimensions SOT-227(ISOTOP)EMin. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033GE M

Datasheet: IXYK100N120C3 , IXYK120N120C3 , SG12N06DP , SG12N06DT , SG12N06P , SG12N06T , SG15N12DP , SG15N12P , JT075N065WED , SG20N12DT , SG20N12T , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T .

 

 
Back to Top