SG23N06T Datasheet and Replacement
Type Designator: SG23N06T
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 48 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Qg ⓘ - Total Gate Charge, typ: 55 nC
Package: TO247AD
SG23N06T substitution
SG23N06T Datasheet (PDF)
sg23n06t.pdf
SG23N06T, SG23N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
sg23n06dt.pdf
SG23N06T, SG23N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXRP15N120 | IXGH40N60B2 | MG300Q2YS50 | T2250AB25E | NGTB20N120IHRWG | IRG4PH50UDPBF
Keywords - SG23N06T transistor datasheet
SG23N06T cross reference
SG23N06T equivalent finder
SG23N06T lookup
SG23N06T substitution
SG23N06T replacement
History: IXRP15N120 | IXGH40N60B2 | MG300Q2YS50 | T2250AB25E | NGTB20N120IHRWG | IRG4PH50UDPBF
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