All IGBT. HGTP14N40F3VL Datasheet

 

HGTP14N40F3VL IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP14N40F3VL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 83

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 10

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 16000

Package: TO220AB

HGTP14N40F3VL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP14N40F3VL Datasheet (PDF)

6.1. hgtp14n4.pdf Size:110K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

S E M I C O N D U C T O R HGTP14N40F3VL 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT April 1995 Features Package • Logic Level Gate Drive JEDEC TO-220AB • Internal Voltage Clamp EMITTER COLLECTOR • ESD Gate Protection GATE • TJ = +150oC COLLECTOR (FLANGE) • Ignition Energy Capable Applications • Automotive Ignition • Small Engine Ignition • Fuel Igni

7.1. hgtp14n3.pdf Size:118K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP14N36G3VL, S E M I C O N D U C T O R HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, June 1995 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB • Logic Level Gate Drive EMITTER COLLECTOR • Internal Voltage Clamp GATE • ESD Gate Protection COLLECTOR (FLANGE) • TJ = 175oC • Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLE

 9.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The

9.2. hgtd1n120bns hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch • 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the • 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs • Typical EOFF . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150

 9.3. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and • 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching •

9.4. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and • >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching • 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and • 600V Switching SOA Capability bipolar transistors. These devices ha

 9.5. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and • 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo

9.6. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated • 24A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

9.7. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and • 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

9.8. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER • 24A, 600V at TC = +25oC COLLECTOR GATE • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) • Short Circuit Rating • Low Conduction Loss JEDEC TO-262AA Description EMITTER

9.9. hgtp12n6.pdf Size:40K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB • 12A, 600V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR • Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipola

9.10. hgtp15n4.pdf Size:46K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP15N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE(ON) 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Ant

9.11. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impeda

9.12. hgtp10n4.pdf Size:49K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE(ON): 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance •

9.13. hgtp10n40f.pdf Size:43K _harris_semi

HGTP14N40F3VL
HGTP14N40F3VL

HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance • Low Conduction Loss COLLECTOR (FLANGE) • Anti-Parallel Diode • tRR < 60ns Des

Datasheet: HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , FGA25N120ANTD , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 .

 

 
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