SG35N12DT Datasheet and Replacement
Type Designator: SG35N12DT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Qgⓘ - Total Gate Charge, typ: 170 nC
Package: TO247AD
- IGBT Cross-Reference
SG35N12DT Datasheet (PDF)
sg35n12dt.pdf
SG35N12T, SG35N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
sg35n12t.pdf
SG35N12T, SG35N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0
Datasheet: SG15N12P , SG200N06S , SG20N12DT , SG20N12T , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , IRGP4066D , SG35N12T , SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T .
Keywords - SG35N12DT transistor datasheet
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