All IGBT. SG35N12T Datasheet

 

SG35N12T Datasheet and Replacement


   Type Designator: SG35N12T
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qg ⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247AD
 

 SG35N12T substitution

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SG35N12T Datasheet (PDF)

 ..1. Size:111K  sirectifier
 sg35n12t.pdf pdf_icon

SG35N12T

SG35N12T, SG35N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

 7.1. Size:111K  sirectifier
 sg35n12dt.pdf pdf_icon

SG35N12T

SG35N12T, SG35N12DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

Datasheet: SG200N06S , SG20N12DT , SG20N12T , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , CRG75T60AK3HD , SG45N12T , SG50N06D2S , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , SG75S12S .

History: IXGT45N120 | IRG4BC20KD-S | IRG7PH35UDPBF | AOK60B65M3

Keywords - SG35N12T transistor datasheet

 SG35N12T cross reference
 SG35N12T equivalent finder
 SG35N12T lookup
 SG35N12T substitution
 SG35N12T replacement

 

 
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