All IGBT. SG45N12T Datasheet

 

SG45N12T Datasheet and Replacement


   Type Designator: SG45N12T
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 255 pF
   Package: TO247AD
 

 SG45N12T substitution

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SG45N12T Datasheet (PDF)

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SG45N12T

SG45N12TDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0 0.426 0.433

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKM195GAR063DN | APTGT75X120TE3

Keywords - SG45N12T transistor datasheet

 SG45N12T cross reference
 SG45N12T equivalent finder
 SG45N12T lookup
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 SG45N12T replacement

 

 
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