SG50N06D2S Specs and Replacement
Type Designator: SG50N06D2S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 290 pF
Package: SOT227
SG50N06D2S Substitution - IGBT ⓘ Cross-Reference Search
SG50N06D2S datasheet
sg50n06d2s.pdf
SG50N06D2S, SG50N06D3S Discrete IGBTs Dim. Millimeter Inches Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 ... See More ⇒
sg50n06dt.pdf
SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 ... See More ⇒
sg50n06d3s.pdf
SG50N06D2S, SG50N06D3S Discrete IGBTs Dim. Millimeter Inches Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 ... See More ⇒
sg50n06ds.pdf
SG50N06S, SG50N06DS Discrete IGBTs C Dim. Millimeter Inches E Dimensions SOT-227(ISOTOP) Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 G=Gate, C=Collector, F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 E=Emitter H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0... See More ⇒
Specs: SG20N12T , SG23N06DT , SG23N06T , SG25S12DT , SG25S12T , SG35N12DT , SG35N12T , SG45N12T , TGAN20N135FD , SG50N06D3S , SG50N06DS , SG50N06DT , SG50N06S , SG50N06T , SG75S12S , SG7N06DP , SG7N06P .
History: IGA30N60H3
Keywords - SG50N06D2S transistor spec
SG50N06D2S cross reference
SG50N06D2S equivalent finder
SG50N06D2S lookup
SG50N06D2S substitution
SG50N06D2S replacement
History: IGA30N60H3
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